D-1 sensors are suitable for measuring the concentrations of the following gases: hydrogen, deuterium, hydrogen sulphide, nitrogen dioxide, ethylmercaptan, chlorine and ammonia.
The basis of the sensor is MIS (metal-insulator-semiconductor) - structure
Pd-Ta2O5-SiO2-Si,
which capacitance changes when reaction with gases occures. The sensor fabrication technology is based on the microelectronics device fabrication technologies and the thin film laser deposition technique. Sensor can be used for measuring the concentration of any gas among noted before, in ambient temperature range –30..+40°С and RH 30 до 90% (30°С).
Gas
Measurable concentration range, ppm
Response times, τ0.9, min
Relaxation times, τ0.1, min
Working temperatures, °C
Lifetime, years
Cl2
0.001 - 10
10
10
100 - 190 *
2
H2S
0.005 - 0.3
5
15
120
1
NO2
0.01 - 10
10
20
100 - 190 *
2
C2H5SH
0.01 - 0.3
5
15
120
1
H2, D2
10-1 - 104
0.1 - 5
0.1 - 5
100
5
NH3
0.02 - 10
8
20
100 - 190 *
2
* In case of pulse heated sensor in gas analyser when the temperature cyclically changes between working temperature 100°C and 190°C.
Signal is measured when the sensor cools to 100°C.